TABLE OF CONTENT
01     PCT PHOTOELECTRIC TEST SYSTEM
02     DEFECT ANALYSIS IN ORGANIC SEMICONDUCTOR DEVICES
03     PCT PRINCIPLE OF OPERATION
04     PCT MEASUREMENT MODES
05     TEST EXAMPLES
06     AREAS OF APPLICATION
07     BENEFITS
08     SYSTEM OVERVIEW AND CONFIGURATION
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01     GALLERY
02     FLYER
03     PUBLICATIONS
 
 
DEFECT ANALYSIS IN ORGANIC SEMICONDUCTOR DEVICES
 
TYPICAL DEFECTS THAT CAN BE OBSERVED IN ORGANIC SEMICONDUCTOR DEVICES ARE:

  • Black spots
  • Particles
  • Coating Inhomogeneities
  • Cathode defects
  • Difference in wetting properties

FOR STUDYING THESE DEFECTS DIFFERENT METHODS ARE COMMONLY USED. THESE INCLUDE:

  • Optical inspection with a microscope
  • Spatially resolved inspection of emission in OLEDs
  • Electrical characterization
  • AFM
  • Scanning electron microscopy

HOWEVER, ALL THESE METHODS HAVE SEVERAL DRAWBACKS. VERY OFTEN THEY ARE:

  • Only suited for light emitting devices
  • Not suited for testing the final devices (incl. encapsulation)
  • Only suited for general device characteristics, i. e. no spatially resolved information
  • Destructive testing methods

The fact that manufacturing processes are the same for the different kinds of applications of organic semiconductors (OLED, OPV, etc.), the limitation that the above mentioned methods can very often only be used for light emitting devices constitutes a severe drawback. Another drawback of all these methods is that they can only be used for visualizing defects. First steps in defect analysis, e.g. discrimination between interface and bulk effects, are not possible with any of these commonly used methods.