| PCT MEASUREMENT MODES |
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For determination of all relevant performance parameters of organic semiconductors the PCT can be operated in 4 automatic measurement modes.
 CURRENT MAPPING: SPATIALLY RESOLVED MEASUREMENT OF THE PHOTOCURRENT AT CONSTANT BIAS VOLTAGE
The device under test is scanned with the laser and a photocurrent map of the device is recorded. Bias voltage, laser intensity, spot size, scan step width, and size of the scan area are user adjustable. For Ubias = 0 a map of the short circuit current (Isc) of the device under test is measured. |
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 VOLTAGE MAPPING: SPATIALLY RESOLVED MEASUREMENT OF THE PHOTOVOLTAGE FOR A CERTAIN PHOTOCURRENT
The device under test is scanned with the laser and a map of the photovoltage that corresponds to a certain preset photocurrent is recorded. The preset photocurrent, laser intensity, spot size, scan step width, and size of the scan area are user adjustable. For Iphoto = 0 a map of the open circuit voltage (Uoc) of the device is measured. |
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IV TESTING: MEASUREMENT OF LOCAL IV CHARACTERISTICS
The dependence of the photocurrent on bias voltage is measured in this mode. Voltage step width, laser intensity and spot size are user adjustable. |
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Ubi MAPPING: SPATIALLY RESOLVED MEASUREMENT OF THE BUILD-IN VOLTAGE
The device under test is scanned at two different laser intensities and a map of the build-in voltage Ubi of the device is recorded. The two laser intensities, spot size, scan step width and size of the scan area are user adjustable.
The combination and interpretation of the results of the different measurement modes yields valuable information on local device performance and on possible issues in development and production of OLEDs, OPVs, Organic Sensors, etc. |
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